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;>2 *#b )**cb"+ & " 09/14/04 irgp20b120u-ep www.irf.com 1 pd- 95897
irgp20b120u-ep 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units conditions fig. v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v,i c =250 a ? v (br)ces / ? tj temperature coeff. of breakdown voltage +1.2 v/c v ge = 0v, i c = 1 ma ( 25 -125 o c ) 3.05 3.45 i c = 20a, v ge = 15v 5, 6 collector-to-emitter saturation 3.37 3.80 i c = 25a, v ge = 15v 7, 8 v ce(on) voltage 4.23 4.85 v i c = 40a, v ge = 15v 9 3.89 4.50 i c = 20a, v ge = 15v, t j = 125c 10 4.31 5.06 i c = 25a, v ge = 15v, t j = 125c v ge(th) gate threshold voltage 4.0 5.0 6.0 v v ce = v ge , i c = 250 a 8,9,10,11 ? v ge(th) / ? tj temperature coeff. of threshold voltage - 1.2 mv/ o c v ce = v ge , i c = 1 ma (25 -125 o c) g fe forward transconductance 13.6 15.7 17.8 s v ce = 50v, i c = 20a, pw=80s 250 v ge = 0v, v ce = 1200v i ces zero gate voltage collector current 420 750 a v ge = 0v, v ce = 1200v, t j =125c 1482 2200 v ge = 0v, v ce = 1200v, t j =150c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions fig. q g total gate charge (turn-on) 169 254 i c = 20a 17 q ge gate - emitter charge (turn-on) 24 36 nc v cc = 600v ct 1 q gc gate - collector charge (turn-on) 82 126 v ge = 15v e on turn-on switching loss * 850 1050 i c = 20a, v cc = 600v ct 4 e off turn-off switching loss * 425 650 j v ge = 15v, rg = 5 ?, l = 200h wf1 e tot total switching loss * 1275 1800 t j = 25 o c, energy losses include tail and diode reverse recovery wf2 e on turn-on switching loss * 1350 1550 ic = 20a, v cc = 600v 12, 14 e off turn-off switching loss * 610 875 j v ge = 15v, rg = 5 ?, l = 200h ct 4 e tot total switching loss * 1960 2425 t j = 125 o c, energy losses include tail and diode reverse recovery wf 1 & 2 td(on) turn - on delay time 50 65 ic = 20a, v cc = 600v 13, 15 tr rise time 20 30 ns v ge = 15v, rg = 5 ?, l = 200h ct 4 td(off) turn - off delay time 204 230 t j = 125 o c wf1 tf fall time 24 35 wf2 c ies input capacitance 2200 v ge = 0v c oes output capacitance 210 pf v cc = 30v 16 c res reverse transfer capacitance 85 f = 1.0 mhz t j = 150 o c, ic = 120a 4 rbsoa reverse bias safe operating area full square v cc = 1000v, v p = 1200v ct 2 rg = 5 ? , v ge = +15v to 0v t j = 150 o c ct 3 scsoa short circuit safe operating area 10 ---- ---- s v cc = 900v, v p = 1200v wf3 rg = 5 ? , v ge = +15v to 0v le internal emitter inductance 13 nh measured 5 mm from the package. * used diode hf40d120ace
irgp20b120u-ep www.irf.com 3 fig.1 - maximum dc collector current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 0 40 80 120 160 t c (c) i c ( a ) fig.3 - forward soa t c =25c; tj < 150c 0.1 1 10 100 1000 1 10 100 1000 10000 v ce (v) i c ( a ) dc 10ms 1ms 100 s 10s 2s pulsed fig.2 - power dissipation vs. case temperature 0 40 80 120 160 200 240 280 320 0 40 80 120 160 t c (c) p t o t ( w ) fig.4 - reverse bias soa tj = 150c, v ge = 15v 1 10 100 1000 1 10 100 1000 10000 v ce (v) i c ( a )
irgp20b120u-ep 4 www.irf.com fig.5 - typical igbt output characteristics tj= -40c; tp=300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v fig.6 - typical igbt output characteristics tj=25c; tp=300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v fig.7 - typical igbt output characteristics tj=125c; tp=300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v
irgp20b120u-ep www.irf.com 5 fig.9 - typical v ce vs v ge tj= -40c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v) v c e ( v ) i ce =10a i ce =20a i ce =40a fig.10 - typical v ce vs v ge tj= 25c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v) v c e ( v ) i ce =10a i ce =20a i ce =40a fig.11 - typical v ce vs v ge tj= 125c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v) v c e ( v ) i ce =10a i ce =20a i ce =40a fig.12 - typ. transfer characteristics v ce =20v; tp=20 s 0 25 50 75 100 125 150 175 200 225 250 0 4 8 12 16 20 v ge (v) i c ( a ) tj=25c tj=125c tj=25c tj=125c
irgp20b120u-ep 6 www.irf.com fig.13 - typical energy loss vs ic tj=125c; l=200h; v ce =600v; rg=22 ? ; v ge =15v 0 1000 2000 3000 4000 5000 6000 0 1020304050 i c (a) e n e r g y ( j ) eon eoff fig.14 - typical switching time vs ic tj=125c; l=200h; v ce =600v; rg=22 ? ; v ge =15v 10 100 1000 0 1020304050 i c (a) t ( n s ) tdon tdoff tf tr fig.15 - typical energy loss vs rg tj=125c; l=200h; v ce =600v; i ce =20a; v ge =15v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0 5 10 15 20 25 30 35 40 45 50 55 rg (ohms) e n e r g y ( u j ) eon eoff fig.16 - typical switching time vs rg tj=125c; l=200h; v ce =600v; i ce =20a; v ge =15v 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 55 rg (ohms) t ( n s ) tdon tdoff tr tf
irgp20b120u-ep www.irf.com 7 fig.22 - typical capacitance vs v ce v ge =0v; f=1mhz 10 100 1000 10000 0 20406080100 v ce (v) c a p a c i t a n c e ( p f ) c ies c oes c res fig.23 - typ. gate charge vs. v ge i c =20a; l=600h 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 q g , total gate charge (nc) v g e ( v ) 600v 800v
fig.24 - normalized transient thermal impedance, junction-to-case 0.001 0.01 0.1 1 10 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.0000 0 t 1 , rectangular pulse duration (sec) single pulse 0.05 0.02 d =0.5 0.01 0.2 0.1 notes: 1. duty factor d = t 1 / t 2 2. peak t j = p dm x z thjc + t c p dm t 1 t 2
irgp20b120u-ep 8 www.irf.com
!! " !!# $ 1k vcc dut 0 l dc driver dut 900v diode clamp l rg vcc dut / driver rg vcc dut r = vcc icm l rg 80 v dut 1000v + - l rg vcc dut % &'() $*$# $
irgp20b120u-ep www.irf.com 9
-200 0 200 400 600 800 1000 -0.2 0.0 0.2 0.4 0.6 0.8 t i me (s) v c e ( v ) -5 0 5 10 15 20 25 i c e ( a ) t f 90% i ce 5% i ce 5% v ce e of f loss
-200 0 200 400 600 800 -0.2 -0.1 0.0 0.1 0.2 0.3 t i me (s) v c e ( v ) -20 0 20 40 60 80 i c e ( a ) test current 90% test current 10% test current 5% v ce t r eon loss
! 0 200 400 600 800 1000 1200 -10 0 10 20 30 t i me (s) v c e ( v ) -50 0 50 100 150 200 250 i c e ( a )
irgp20b120u-ep 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/04
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as s e mb l y year 0 = 200 0 as s emble d on ww 35, 2000 in the assembly line "h" example: this is an irgp30b120kd-e lot code 5657 with assembly part number dat e code international rectifier logo 035h 56 57 we e k 35 line h lot code note: "p" in as sembly line position indicates "l ead-f ree"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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